Low operation voltage transparent resistive random access memory (T-RRAM) based on ultrathin a-TiOx films and its resistive switching characteristics

Journal

2014 IEEE International Nanoelectronics Conference, INEC 2014

Date Issued

2016

Author(s)

Huang, Y.-J.

Shih, I.-C.

Chao, S.-C.

Wen, C.-Y.

He, J.-H.

DOI

10.1109/INEC.2014.7460426

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/491106

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-84971201843&doi=10.1109%2fINEC.2014.7460426&partnerID=40&md5=203ce7a044cde1fd7df709522a9bae4e

SDGs

[SDGs]SDG7

Type

conference paper