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  4. Oscillator-Based Reactance Sensors With Injection Locking for High-Throughput Flow Cytometry Using Microwave Dielectric Spectroscopy
 
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Oscillator-Based Reactance Sensors With Injection Locking for High-Throughput Flow Cytometry Using Microwave Dielectric Spectroscopy

Journal
IEEE Journal of Solid-State Circuits
Journal Volume
51
Journal Issue
2
Pages
457-472
Date Issued
2016
Author(s)
JUN-CHAU CHIEN  
簡俊超
DOI
10.1109/JSSC.2015.2500362
URI
https://www.scopus.com/inward/record.uri?eid=2-s2.0-84962367331&doi=10.1109%2fJSSC.2015.2500362&partnerID=40&md5=8d95eab2061b9f7e67b26a20e8b333aa
https://scholars.lib.ntu.edu.tw/handle/123456789/552439
Abstract
This paper presents the analysis and design of oscillator-based reactance sensors employing injection locking for high-throughput label-free single-cell analysis using dielectric spectroscopy at microwave frequencies. By injection-locking two sensing LC-oscillators with an I/Q excitation source, the measurement of the sample-induced frequency shift caused by the interaction with the electromagnetic fields is performed through phase detection with injection-strength-dependent transducer gain. Such inherent phase amplification offered by the injection locking not only relaxes the design requirement for the readout circuits but also maintains the highest rejection against common-mode errors associated with the drift of the supply voltage and the environmental parameters. To reduce flicker noise contribution, a chopping technique employing phase modulation is exploited. In addition, this paper presents a novel ping-pong chopping approach to alleviate chopping-induced dc offset. In this prototype, four sensing channels, covering frequencies between 6.5 and 30 GHz, are distributed along a microfluidic channel fabricated with standard photolithography. Measurements show that the proposed microwave capacitive sensors achieve a sub-aFrms of noise sensitivity at 100 kHz filtering bandwidth, enabling measurement throughput exceeding 1 k cells/s. The sensor prototype is implemented in 65 nm CMOS technology and consumes 65 mW at 1 V supply.
Type
journal article

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