Observation of Acoustic Charge Transport in GaN-Based Quantum Well Structures under Surface Acoustic Wave Excitations
Journal
IEEE Transaction Ultrasonics Ferroelectrics and Frequency Control
Journal Volume
68
Journal Issue
5
Pages
1949-1954
Date Issued
2021
Author(s)
Abstract
Though the acoustoelectric and acoustooptic interactions have been widely studied on III-V semiconductors, most studies were conducted at low temperature to avoid the influence of lattice scattering. Here, we demonstrate larger-than-1-GHz optical oscillation and acoustic charge transport at room temperature from a nitride-based LED (light-emitting diode) by acoustic wave excitation. The optical oscillation is generated by the harmonics of acoustic waves, while the acoustic transport of carriers was observed from the LED light output at different acoustic excitation frequencies. Furthermore, with the change of bias voltage, the frequency response of light output varies correspondingly due to the thermal disturbance that affects the lattice vibration and acoustic wave propagation. The results also suggest that we are able to achieve a tunable optical resonant frequency by varying bias voltages without changing the LED structure. ? 1986-2012 IEEE.
Subjects
Acoustic surface wave devices; Acoustic waves; Bias voltage; Carrier transport; Frequency response; Gallium nitride; III-V semiconductors; Lattice vibrations; Light emitting diodes; Natural frequencies; Quantum chemistry; Semiconductor quantum wells; Temperature; Wide band gap semiconductors; Acoustic charge transports; Acoustic excitation; Acoustic wave excitation; Acousto-optic interaction; Optical oscillations; Quantum well structures; Surface acoustic waves; Thermal disturbance; Acoustic wave propagation
Type
journal article