Electrical and Optical Properties of Diamond like Carbon Doped with Nitrogen
Date Issued
2006
Date
2006
Author(s)
Lin, Yi-Siou
DOI
zh-TW
Abstract
The electric and optical properties of the effects of nitrogen doing on diamond-like carbon films are studied in this thesis. The resistivity, carrier concentration, and mobility of the samples are measured by Hall effect. Raman, Photoluminescence (PL), and Fourier Transform Infrared (FTIR) spectroscopies were used to analyze the structure and bonding of our samples.
We found that the electrical conduction of nitrogen doped diamond like carbon is due to the thermal activation of carriers into the extended states at high temperature and hopping conduction at low temperature. The resistivity and carrier concentration could be changed by doping with nitrogen but the doping efficiency is low and increasing flow rate of N2 during sample growth does not necessary yield higher electron concentration in the sample. The effect of annealing has a much better effect in decreasing the resistivity and in increasing the carrier concentration of the samples.
Raman measurements show that the fraction of sp2 bonding in the diamond-like carbon increases with nitrogen doping. Annealing of the samples also increases the fraction the sp2 bonding in the diamond-like carbon. Both DLC and N:DLC have similar peaks in the PL spectra and the PL intensity increases after annealing. FTIR of nitrogen incorporated DLC films reveals the existence of numerous bands by tracing the intensity of the samples with different nitrogen doping concentration we could clearly identify the which of the absorption peaks are related to the bonding between carbon and nitrogen.
Subjects
類鑽碳
霍爾效應
拉曼
光致螢光
傅立葉轉換紅外光譜
DLC
Hall effect
Raman
PL
FTIR
Type
thesis
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