Low temperature chemical vapor deposition growth of -SiC on (100) Si using methylsilane and device characteristics

Resource

Journal of Applied Physics 82 (9): 4558

Journal

Journal of Applied Physics

Journal Volume

82

Journal Issue

9

Pages

-

Date Issued

1997

Date

1997

Author(s)

Liu, C. W.

Sturm, J. C.

URI

Type

journal article

File(s)

Name

05.pdf

Size

1.14 MB

Format

Adobe PDF

Checksum

(MD5):94ed0a725180bd3aa66ef36f4fdf8612