Research on Pre-distortion Technique for K-Band CMOS Power Amplifier
Date Issued
2012
Date
2012
Author(s)
Chen, Kuan-Wei
Abstract
In this thesis, a modified pre-distortion technique is proposed to improve the linear operation region of CMOS power amplifier. The linearizer is implemented by cold-mode FET and modified by a differential signal. This modified technique can increase the compensated ability of the linearizer, thus the proposed linearizer is more suitable for CMOS power amplifier than conventional linearizer. The operation details and the design considerations of the modified linearizer are investigated, and the optimization of the proposed linearizer in power amplifier design is also mentioned in the analysis.
A K-band power amplifier with the pre-distortion technique is fabricated in 180-nm CMOS technology. According to the measurement, the proposed PA consumes 219 mW at quiescent state, and OP1dB is improved from 16 dBm to 17.5 dBm when linearizer is turned on. The PAE at OP1dB is also increase 3%. The Psat of the proposed power amplifier is 19.9 dBm. In two-tone measurement, the IMD3 is improved at least 6 dB with output power 8 dBm. The spectral re-growth of the PA is suppressed 7 dB by the linearizer in the different digital modulations.
By utilizing the pre-distortion technique, the proposed PA has better output power and PAE at 1-dB compression point than other reported 24-GHz PA.
Subjects
Power amplifier
Pre-distortion
K-band
Linearization technique
Digital modulation
Type
thesis
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