Effects of N2O fluence on the PECVD-grown Si-rich SiO x with buried Si nanocrystals

Journal

Materials Research Society Symposium

Journal Volume

862

Pages

319-324

Date Issued

2005

Author(s)

Lin, C.-J.

Kuo, H.-C.

Chen, C.-Y.

Chueh, Y.-L.

Chou, L.-J.

Chang, C.-W.

Diau, E.W.-G.

URI

http://www.scopus.com/inward/record.url?eid=2-s2.0-30544442148&partnerID=MN8TOARS

http://scholars.lib.ntu.edu.tw/handle/123456789/316376

Type

conference paper