Electroluminescence enhancement of SiGe/Si multiple quantum wells through nanowall structures
Journal
Nanotechnology
Journal Volume
19
Journal Issue
36
Pages
1-4
Date Issued
2008
Author(s)
Chen, T.T.
Hsieh, Y.P.
Wei, C.M.
Chen, Y.F.
Chen, K.-H.
Peng, Y.H.
CHIEH-HSIUNG KUAN
Abstract
The enhancement of light extraction from Si(0.5)Ge(0.5)/Si multiple quantum wells (MQWs) with nanowall structures fabricated by electron cyclotron resonance (ECR) plasma etching is presented. It is shown that the ECR plasma treatment does not damage the crystalline quality. At a driving current of 5.5 × 10(6) A m(-2), the light output intensity of the MQWs with nanowall structures shows an enhancement of about 50% compared with that of the original MQWs. In addition to the enhanced light extraction, the improved optoelectronic properties are also attributed to the strain relaxation in nanowall structures.
SDGs
Publisher
Institute of Physics Publishing
Type
journal article