Enhancement of efficiency of InGaN-based light emitting diodes through strain and piezoelectric field management
Journal
Journal of Applied Physics
Journal Volume
114
Journal Issue
7
Date Issued
2013
Author(s)
Abstract
We report calculations of the strain dependence of the piezoelectric field within InGaN multi-quantum wells light emitting diodes. Such fields are well known to be a strong limiting factor of the device performance. By taking into account the nonlinear piezoelectric coefficients, which in particular cases predict opposite trends compared to the commonly used linear coefficients, a significant improvement of the spontaneous emission rate can be achieved as a result of a reduction of the internal field. We propose that such reduction of the field can be obtained by including a metamorphic InGaN layer below the multiple quantum well active region. © 2013 AIP Publishing LLC.
SDGs
Type
journal article