Skip to main content
English
中文
Log In
Log in
Log in with ORCID
NTU Single Sign On
Have you forgotten your password?
Home
College of Science / 理學院
Applied Physics / 應用物理研究所
Enhancement-Mode (with Channel Inversion) and Depletion-Mode MOSFETs with Ga2O3 (Gd2O3)/Si3N4 Dual-Layer Gate Dielectrics on In0. 2Ga0. 8As
Details
Enhancement-Mode (with Channel Inversion) and Depletion-Mode MOSFETs with Ga2O3 (Gd2O3)/Si3N4 Dual-Layer Gate Dielectrics on In0. 2Ga0. 8As
Journal
MRS Spring Meeting
Date Issued
2007
Author(s)
Zheng, JF
Tsai, W
MINGHWEI HONG
Lin, TD
Chen, CP
Kwo, J
Wang, XW
Ma, TP
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/331383
Description
San Francisco, CA, USA
Type
journal article
