Electron transport in In-rich InxGa1-xN films
Date Issued
2005
Date
2005
Author(s)
Lin, Shih-Kai
DOI
en-US
Abstract
This thesis focuses on electron transport properties in InxGa1−xN (x =1,
0.98, 0.92, 0.8, 0.7) thin films. We have performed transport measurements
on InxGa1−xN thin films over a wide temperature range. We observed that
within experimental error, the carrier densities are temperature independent.
Besides, the resistivities, combined with the carrier densities, show
a tendency of transition from metal to semiconductor with increasing Ga
composition. The calculated mobility shows that for metallic like samples
(InxGa1−xN with x ≥0.92), the dominant scattering mechanism is the imperfection
scattering over the whole temperature range. We also showed
that Bloch T5 curves fit very well the resistivities of samples InxGa1−xN
with x =1, 0.98, 0.92, once again supporting that very high In composition
InxGa1−xN films can be considered as degenerate electron systems in which
the Fermi level is much higher than conduction-band bottom over the whole
measurement range.
Subjects
氮化銦鎵
InGaN
Type
thesis
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