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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Quantum well saturation effect on the reduction of base transit time in light-emitting transistors
Details
Quantum well saturation effect on the reduction of base transit time in light-emitting transistors
Journal
IEEE Transactions on Electron Devices
Journal Volume
61
Journal Issue
10
Pages
3472-3476
Date Issued
2014
Author(s)
CHAO-HSIN WU
Wang, H.-L.
Yang, H.-H.
CHAO-HSIN WU
DOI
10.1109/TED.2014.2349922
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-84907459034&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/385016
Type
journal article