Formation of recording marks on as-deposited Ge2Sb2Te5 phase-change thin film
Date Issued
2007
Date
2007
Author(s)
Yan, Yu-Xian
DOI
zh-TW
Abstract
Abstract
In this thesis, we study the formation of recording marks on as-deposited Ge2Sb2Te5 phase-change nano thin film. We use an atomic force microscopy (AFM) and optical pump-probe system to investigate the topographic change and optical-thermal dependence of marks formation. From the experimental results, the process of recording mark formation is well studied in both incident power and pulse duration aspects. Through the complete experiments, the arbitraty pattern of recording marks can be written on phase-change material precisely by changing layerd structure and tuning incident power and pulse duration. For the further study in ultra-high density recording, we apply a zinc oxide (ZnOx) nano thin film on phase-change recording layer. The results show the tiny bright spots and specific properties can be obtained by the interaction between ZnOx nano thin film and the nanostructured recording marks.
Subjects
相變化
記錄點
奈米
鍺銻碲
結晶態
非晶態
phase change
recording mark
nano
Ge2Sb2Te5
crystalline state
as-deposited
amorphous
Type
thesis