Bandwidth Enhancement in an Integratable SiGe Phototransistor by Removal of Excess Carriers
Resource
IEEE ELECTRON DEVICE LETTERS, VOL. 25, NO. 5, MAY 2004
Journal
IEEE ELECTRON DEVICE LETTERS
Journal Volume
VOL. 25
Journal Issue
NO. 5
Pages
-
Date Issued
2004-05
Date
2004-05
Author(s)
Pei, Z.
Shi, J.W.
Hsu, Y.M.
Yuan, F.
Liang, C.S.
Lu, S.C.
Hsieh, W.Y.
Tsai, M.J.
Liu, C.W.
DOI
246246/200611150121588
Abstract
In this letter, we create a path to remove excess carriers
in the base region of a SiGe phototransistor (HPT) by introducing
the trap centers. The behavior of the trap centers in the
SiGe heterojunction bipolar transistor (HBT) is a form of nonideal
(nkT) base current. The responsivity of the device is 0.43 A/W
with fully SiGe HBT-compatible device structure to facilitate the
integration of the following amplification circuitry. The full-width
at half-maximum of the pulse is 90 ps and the tail of the optical
pulse response is largely reduced with the nkT current. By
reducing the tail, bandwidth is increased from 1.5 to 3 GHz. This
proposes SiGe HPT is applicable for optoelectronic technology.
Subjects
Bandwidth
nonideal (nkT) base current
SiGe
Publisher
Taipei:National Taiwan University Dept Mech Engn
Type
journal article
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