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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Fringing-Induced Barrier Lowering (FIBL) Effects of 100nm FD SOI NMOS Devices with High Permittivity Gate Dielectrics and LDD/Sidewall Oxide Spacer
Details
Fringing-Induced Barrier Lowering (FIBL) Effects of 100nm FD SOI NMOS Devices with High Permittivity Gate Dielectrics and LDD/Sidewall Oxide Spacer
Journal
IEEE SOI Conference Proc
Pages
93-94
Date Issued
2002-10
Author(s)
S. C. Lin
J. B. Kuo
JAMES-B KUO
DOI
10.1109/soi.2002.1044431
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/299091
Type
conference paper