Pseudo-exponential function for MOSFETs in saturation
Journal
IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing
Journal Volume
47
Journal Issue
11
Pages
1318-1321
Date Issued
2000
Author(s)
Chang, C.-C.
Abstract
In this paper, according to the Taylor's series expansion, two pseudo-exponential circuits were realized. The proposed circuits provide a simple method to synthesize pseudo-exponential circuits. Both of the circuits were composed of MOS transistors operating in saturation. One of the pseudo-exponential function circuits is voltage-mode and was tested using discrete components. The other one is current-mode, which is verified with the 0.8 μm CMOS process by Hspice simulations. The results confirm the feasibility of the proposed circuits.
SDGs
Type
journal article