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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Residual Charges Effect on the Annealing Behavior of Co-60 Irradiated MOS Capacitors
Details
Residual Charges Effect on the Annealing Behavior of Co-60 Irradiated MOS Capacitors
Journal
IEEE Transactions on Nuclear Science
Journal Volume
35
Journal Issue
1
Pages
960-965
Date Issued
1988
Author(s)
Hwu, J.-G.
Lee, G. S.
Lee, Si-Chen
Wang, Way-Seen
DOI
10.1109/23.12867
URI
http://ntur.lib.ntu.edu.tw//handle/246246/120858
Type
journal article
