Residual Charges Effect on the Annealing Behavior of Co-60 Irradiated MOS Capacitors
Journal
IEEE Transactions on Nuclear Science
Journal Volume
35
Journal Issue
1
Pages
960-965
Date Issued
1988
Author(s)
Abstract
It was experimentally observed that the residual charges of a MOS capacitor after C-V testing can exist for a long time. These residual charges induce a nonzero field at the SiO2/Si interface, and subsequently affect the annealing behavior due to a charge-temperature effect if the MOS capacitor is left floating during annealing. This problem is solved by a flat-band condition annealing method based on a charge-temperature technique. The annealing kinetics of a Co-60 irradiated MOS capacitor are then studied. A power law behavior of the annealing kinetics has been obtained for oxide charges annealed at 300°C. ossible explanations are given for this observation. © 1988 IEEE
Type
journal article