Repository logo
  • English
  • 中文
Log In
Have you forgotten your password?
  1. Home
  2. College of Engineering / 工學院
  3. Materials Science and Engineering / 材料科學與工程學系
  4. Flexible Complementary Oxide Thin-Film Transistor-Based Inverter with High Gain
 
  • Details

Flexible Complementary Oxide Thin-Film Transistor-Based Inverter with High Gain

Journal
IEEE Transactions on Electron Devices
Journal Volume
68
Journal Issue
3
Pages
1070-1074
Date Issued
2021
Author(s)
Hsu S.-M
Su D.-Y
Tsai F.-Y
Chen J.-Z
FENG-YU TSAI  
JIAN-ZHANG CHEN  
I-CHUN CHENG  
DOI
10.1109/TED.2021.3052443
URI
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85100488311&doi=10.1109%2fTED.2021.3052443&partnerID=40&md5=ce922a545ccf15b79063eab12a501106
https://scholars.lib.ntu.edu.tw/handle/123456789/576909
Abstract
Wearable bio-sensing devices are considered promising for ubiquitous heath monitoring. To accurately read out small bio-signals, the development of high-performance flexible front-end circuits is crucial. Oxide semiconductors are considered one of the most promising active channel materials for on-polymeric-foil electronics. In this article, a high-gain flexible complementary metal-oxide-semiconductor (CMOS) inverter with a beta ratio of 1, a desirable feature for device miniaturization, was demonstrated by monolithically integrating a top-gated n-type indium gallium zinc oxide (IGZO) thin-film transistor (TFT) and a bottom-gated p-type SnO TFT on a 5.5-μm-thick polyimide substrate. The influence of atomic layer deposited (ALD)-HfO2 capping layer on the properties of oxide active channels has been analyzed. The flexible inverter exhibited a high static voltage gain of 370 V/V and balanced noise margins (noise margin high of 4.8 V, noise margin low of 4.7 V) for a supply voltage of 10 V. In addition, the voltage transfer characteristics remained virtually unchanged when the device was subjected to an outward or an inward bending radius of 2.5 mm, indicating the complementary oxide-TFT-based inverter is practical for flexible electronics applications. ? 1963-2012 IEEE.
Subjects
Atomic layer deposition; CMOS integrated circuits; Electric inverters; Field effect transistors; Flexible electronics; Gallium compounds; II-VI semiconductors; Metals; MOS devices; Oxide semiconductors; Semiconducting indium; Semiconducting indium compounds; Substrates; Thin film transistors; Thin films; Zinc oxide; Atomic layer deposited; Complementary metal oxide semiconductors; Desirable features; Electronics applications; Front-end circuits; Indium gallium zinc oxides; Oxide thin-film transistors; Polyimide substrate; Thin film circuits
Type
journal article

臺大位居世界頂尖大學之列,為永久珍藏及向國際展現本校豐碩的研究成果及學術能量,圖書館整合機構典藏(NTUR)與學術庫(AH)不同功能平台,成為臺大學術典藏NTU scholars。期能整合研究能量、促進交流合作、保存學術產出、推廣研究成果。

To permanently archive and promote researcher profiles and scholarly works, Library integrates the services of “NTU Repository” with “Academic Hub” to form NTU Scholars.

總館學科館員 (Main Library)
醫學圖書館學科館員 (Medical Library)
社會科學院辜振甫紀念圖書館學科館員 (Social Sciences Library)

開放取用是從使用者角度提升資訊取用性的社會運動,應用在學術研究上是透過將研究著作公開供使用者自由取閱,以促進學術傳播及因應期刊訂購費用逐年攀升。同時可加速研究發展、提升研究影響力,NTU Scholars即為本校的開放取用典藏(OA Archive)平台。(點選深入了解OA)

  • 請確認所上傳的全文是原創的內容,若該文件包含部分內容的版權非匯入者所有,或由第三方贊助與合作完成,請確認該版權所有者及第三方同意提供此授權。
    Please represent that the submission is your original work, and that you have the right to grant the rights to upload.
  • 若欲上傳已出版的全文電子檔,可使用Open policy finder網站查詢,以確認出版單位之版權政策。
    Please use Open policy finder to find a summary of permissions that are normally given as part of each publisher's copyright transfer agreement.
  • 網站簡介 (Quickstart Guide)
  • 使用手冊 (Instruction Manual)
  • 線上預約服務 (Booking Service)
  • 方案一:臺灣大學計算機中心帳號登入
    (With C&INC Email Account)
  • 方案二:ORCID帳號登入 (With ORCID)
  • 方案一:定期更新ORCID者,以ID匯入 (Search for identifier (ORCID))
  • 方案二:自行建檔 (Default mode Submission)
  • 方案三:學科館員協助匯入 (Email worklist to subject librarians)

Built with DSpace-CRIS software - Extension maintained and optimized by 4Science