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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Growth and characterization of InAsN on InAs substrate by using RF plasma assisted gas source molecular beam epitaxy
Details
Growth and characterization of InAsN on InAs substrate by using RF plasma assisted gas source molecular beam epitaxy
Journal
Optics and Photonics/Taiwan'99
Pages
FR-III4-A-4
Date Issued
1999-01
Author(s)
J. S. Wang
G. R. Chen
L. W. Sung
HAO-HSIUNG LIN
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/351817
Type
conference paper
