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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Asymmetric Gate Misalignment Effect on Subthreshold Characteristics DG SOI NMOS Devices Considering Fringing Electric Field Effect
Details
Asymmetric Gate Misalignment Effect on Subthreshold Characteristics DG SOI NMOS Devices Considering Fringing Electric Field Effect
Journal
Electron Devices and Material Symposium
Date Issued
2003-12
Author(s)
M. T. Lin
E. C. Sun
J. B. Kuo
JAMES-B KUO
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/304108
Type
conference paper