Study on Crossings of Silicon Photonic Wires
Date Issued
2008
Date
2008
Author(s)
Chin, Chun-Chieh
Abstract
In recent years, silicon photonics become a popular topic of having the development. Using light wave to deliver a signal compare with using electric wire to deliver one, there are many advantages about using light including enhancing the safety of system, increasing a bandwidth and shrinking the size of structure, and raising a stability. Silicon-on-insulator (SOI) photonic wires can combine many compact functions into a photonic integrated circuit, and it often have crossings structure to save the volume of devices. This paper is about study on different kind of crossings structure, and provide a novel one. We choose Si and Si as the material of waveguide core and cladding, respectively. The width and height of input waveguide are both 0.25 μm. We use BPM to simulate and design our parameters of crossings size. The results show the transmittance efficiency up to 94%, total length of structure is about 8 μm. There is good fabrication tolerance. The efficiency is higher than 90% while propagation wavelength is from 1.45 μm to 1.65 μm, and we don’t need two-step etching.
Subjects
waveguide
crossings
photonic wire
Type
thesis
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