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The effect of gate recess profile on device performance of Ga/sub 0.51/In/sub 0.49/P/In/sub 0.2/Ga/sub 0.8/As doped-channel FET's
Journal
IEEE Transactions on Electron Devices
Journal Volume
46
Journal Issue
1
Pages
48-54
Date Issued
1999
Author(s)
Type
journal article