Dislocation generation mechanisms of In x Ga 1-x As (0?x?1) epilayers grown on (100) InP substrates by molecular beam epitaxy

Journal

Journal of Applied Physics

Journal Volume

75

Journal Issue

3

Pages

1511-1516

Date Issued

1994

Author(s)

Chang, S.-Z.

Lee, S.-C.

Chen, C.R.

Chen, L.J.

DOI

10.1063/1.356386

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/498799

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-0011331723&doi=10.1063%2f1.356386&partnerID=40&md5=b80227d4bd32e0669eb5f96ee46b0ad5

Type

journal article