Modeling the CBE/CBC Capacitance of the Parasitic Bipolar Device in the 40nm PD SOI NMOS Device
Date Issued
2011
Date
2011
Author(s)
Cheng, Yu-Heng
Abstract
This thesis describes the model of the parasitic bipolar device in the 40nm PD SOI NMOS, and observes the charges in the thin film via transient analysis. The SOI CMOS device is described in chapter 1. Chapter 2 illustrates current mechanism considering the floating-body effect. For transient analysis , the Gummel-Poon model for the parasitic bipolar device in the PD SOI MOS device is very important. The CBE/CBC capacitance models are important in the Gummel-Poon model for transient analysis. CBE/CBC capacitance behavior during DC is then described. Then in chapter 3, the CBE/CBC capacitance behavior during turn-on transient of PD SOI NMOS device is described. Chapter 4 is the conclusion.
Subjects
SOI
Parasitic Bipolar Device
Gummel-Poon model
File(s)![Thumbnail Image]()
Loading...
Name
ntu-100-R98943110-1.pdf
Size
23.32 KB
Format
Adobe PDF
Checksum
(MD5):be661d995529368982991ccbd6e6f46c