Publication:
GaAs nanowire/PEDOT:PSS hybrid solar cells: Morphological and performance characterization

cris.lastimport.scopus2025-05-09T22:29:52Z
cris.virtual.departmentPhotonics and Optoelectronicsen_US
cris.virtual.departmentElectrical Engineeringen_US
cris.virtual.departmentElectronics Engineeringen_US
cris.virtual.orcid0000-0003-3787-2163en_US
cris.virtualsource.department7818eec7-1f9c-44f7-9973-e5ec2d50a712
cris.virtualsource.department7818eec7-1f9c-44f7-9973-e5ec2d50a712
cris.virtualsource.department7818eec7-1f9c-44f7-9973-e5ec2d50a712
cris.virtualsource.orcid7818eec7-1f9c-44f7-9973-e5ec2d50a712
dc.contributor.authorChao, J.-J.en_US
dc.contributor.authorShiu, S.-C.en_US
dc.contributor.authorCHING-FUH LINen_US
dc.date.accessioned2018-09-10T08:14:22Z
dc.date.available2018-09-10T08:14:22Z
dc.date.issued2010
dc.description.abstractIn this study, a new type of hybrid solar cell based on a heterojunction between poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and vertically aligned n-type GaAs nanowire (NW) arrays is investigated. The GaAs NW arrays are fabricated by directly performing the nano-etching of GaAs wafer with spun-on SiO2 nanospheres as the etch mask through inductively coupled plasma reactive ion etching. The PEDOT:PSS adheres to the surface of GaAs NW arrays to form a p-n junction. The morphology of GaAs NW arrays strongly influences the characteristics of the GaAs NW/PEDOT:PSS hybrid solar cells. The suppression of reflectance and the interpenetrating heterojunction interface of GaAs NW arrays will offer great improvements in efficiency relative to a conventional planar cell. The power conversion efficiency of GaAs NW/PEDOT:PSS cells under AM 1.5 global one sun illumination can achieve 5.8 %. © 2010 IEEE.
dc.identifier.doi10.1109/PVSC.2010.5614644
dc.identifier.urihttp://www.scopus.com/inward/record.url?eid=2-s2.0-78650105040&partnerID=MN8TOARS
dc.identifier.urihttp://scholars.lib.ntu.edu.tw/handle/123456789/357965
dc.languageenen
dc.relation.ispartofIEEE Photovoltaic Specialists Conferenceen_US
dc.relation.pages946-948
dc.sourceAH-Scopus to ORCID
dc.subject.classification[SDGs]SDG7
dc.subject.otherEtch mask; Ethylenedioxythiophenes; GaAs; Gaas nanowires; GaAs wafer; Hybrid solar cells; Inductively coupled-plasma reactive ion etching; Interpenetrating heterojunctions; One-sun illumination; P-n junction; PEDOT:PSS; Performance characterization; Planar cells; Poly(styrene sulfonate); Power conversion efficiencies; Vertically aligned; Conversion efficiency; Electromagnetic induction; Gallium alloys; Gallium arsenide; Heterojunctions; Inductively coupled plasma; Nanowires; Photovoltaic effects; Reactive ion etching; Silicon compounds; Solar cells; Semiconducting gallium
dc.titleGaAs nanowire/PEDOT:PSS hybrid solar cells: Morphological and performance characterization
dc.typeconference paper
dspace.entity.typePublication

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