Application of semi-insulating poly-silicon passivation layer for high voltage rectifier and high power diode
Date Issued
2005
Date
2005
Author(s)
Wang, Tzu-Chiang
DOI
zh-TW
Abstract
Semi-insulating poly-silicon (SIPOS) layer has been applied to passivate the P/N junction of diodes and rectifiers. The application of SIPOS passivation layer in high voltage rectifiers (2400 V) and high power diodes (6000 W) are studied in this thesis. The SIPOS passivation layer deposited by LPCVD with gas flow ratio Xg=[N2O]/[N2O]+[SiH4]=0.12 has been achieved successfully, it’s performance is as following: insulation capacity is 2×108 V/cm and 3% variation in thickness on 4 inch substrate wafer. The application of SIPOS passivation layer for high reverse voltage (2400V) damper and clamper rectifiers were fabricated successfully. The best one can withstand reverse voltage higher 40% than that of the traditional glass passivation layer, this leads to a new device packaged using surface mount device (SMD). In another application, the SIPOS passivation layer for high power (6000W) automotive transient voltage suppressors (TVS) and power zener diodes are fabricated successfully, the advantages are the increase of the capability of enduring reverse surge current about 20% than that of the traditional wet oxidation passivation process and extend the operation life cycles of the diode.
Subjects
絕緣層
二極體
整流器
多晶矽
passivation layer
diode
rectifier
poly silicon
Type
thesis
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