Formation of SiCH6-mediated Ge quantum dots with strong field emission properties by ultrahigh vacuum chemical vapor deposition

Resource

Journal of Applied Physics 98 (7): 073506

Journal

Journal of Applied Physics

Journal Volume

98

Journal Issue

7

Pages

-

Date Issued

2005

Date

2005

Author(s)

Lee, S. W.

Chueh, Y. L.

Chen, L. J.

Chou, L. J.

Chen, P. S.

Tsai, M.-J.

Liu, C. W.

URI

Type

journal article

File(s)

Name

54.pdf

Size

260.53 KB

Format

Adobe PDF

Checksum

(MD5):9f7a52a4ea3698bc6295345b7ac68127