Skip to main content
English
中文
Log In
Log in
Log in with ORCID
NTU Single Sign On
Have you forgotten your password?
Home
College of Electrical Engineering and Computer Science / 電機資訊學院
Electronics Engineering / 電子工程學研究所
Effects of emitter scaling and device biasing on millimeter-wave VCO performance in 200 GHz SiGe HBT technology
Details
Effects of emitter scaling and device biasing on millimeter-wave VCO performance in 200 GHz SiGe HBT technology
Journal
Asia-Pacific Microwave Conference Proceedings, APMC
Journal Volume
2
Date Issued
2005
Author(s)
YI-JAN EMERY CHEN
Kuo, W.-M.L.
Chen, Y.-J.E.
Cressler, J.D.
Freeman, G.
Chen, Y.-J.E.
DOI
10.1109/APMC.2005.1606401
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-33847217284&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/314309
Type
conference paper