Identical Pulse With Opposite Polarity Assistance Detrapping - Arithmetic Progression (OPAD-AP) to Ideal Potentiation of FeFET for Synapse
Journal
IEEE Transactions on Electron Devices
ISSN
00189383
Date Issued
2024-01-01
Author(s)
Abstract
A double-HZO ferroelectric FET (FeFET) with near-ideal potentiation linearity αP = 0.07) and applicable conductance ratio GMax/Gmin, Δ G) > 16 was demonstrated by using opposite polarity assistance detrapping (OPAD) stimulation in this study. Double-HZO can provide diverse coercive field for analog FE synaptic operation, and the OPAD scheme helps electron detrapping to avoid trapped charge interference. In addition, the reproducibility of the OPAD has been validated, which is promising for future deep neural network (DNN) circuit design. © 1963-2012 IEEE.
Subjects
Deep neural network (DNN)
detrapping
ferroelectric FET (FeFET)
synapse
Publisher
Institute of Electrical and Electronics Engineers Inc.
Type
journal article