基於氣體動力論之微尺度傳輸研究
Date Issued
2002-07-31
Date
2002-07-31
Author(s)
楊照彥
DOI
902212E002203
Abstract
The purpose of this work are two
fold﹒First﹐the molecular dynamics
(MD) simulation is used to investigate the
influence of process parameters on metal
thin film morphology and trench – filling
morphology in the damascene process﹒The
MD simulation adopts a two dimensional
deposition model and uses Lennard–Jones
Potential to represent the intermolecular
force acting between Cu atoms﹒The Gear’s
predictor – corrector algorithm is used to
calculate the trajectories of atoms ﹒ A
constant substrate temperature is assumed﹒
The rescaling technique is utilized to model
the energy absorbed by the substrate due to
the impact of incident atoms ﹒ The
morphologies of films for different physical
parameters﹐such as temperature﹐incident
energy ﹐ deposition rate and high
temperature reflow process are discussed﹒
It is found that temperature and incident
energy effect play a similar role and with
increasing temperature or incident energy﹐
the void percentage and root mean aquare
roughness are decreasing ﹒ Meanwhile ﹐
there exists an optimal region of deposition
rate for an incident energy﹒Refiow process
is achieved by annealing procedure ﹐ the
heating up and then cooling down the trench
rapidly﹐to drive the copper diffusion and
remedy the void defect﹒Secondary is to
improve the computational efficiency of
MD simulation﹒We treat the calculation of
interactions which is the most time –
consuming part by using distributed
computing based on the Message Passing
Interface (MPI)﹒In our result﹐distributed
computing is able to reduce the complexity
from O(N²) to O(N²/p) on a p–processor
system for N particles and achieve a linear
speedup result﹒
Subjects
Molecular Dynamics
Simulation
Sputter Deposition
Distributed Computation
Message Passing Interface (MPI)
Simulation
Sputter Deposition
Distributed Computation
Message Passing Interface (MPI)
Publisher
臺北市：國立臺灣大學應用力學研究所
Type
report
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