Effects of rapid thermal annealing on the optical and electrical properties of InN epilayers
Journal
Journal of Physics Condensed Matter
Journal Volume
18
Journal Issue
42
Date Issued
2006
Author(s)
Abstract
We studied the optical and electrical properties of InN epilayers with rapid thermal annealing (RTA). The intensity of the photoluminescence (PL) and the carrier mobility were found to increase as the temperature of RTA was increased. We suggest that the formation of compensating acceptors (indium vacancies) after RTA is responsible for the improvement of the quality in InN. The dependence of the PL emission peak on carrier concentration provides a possible method for estimating the carrier concentration in degenerate InN. © IOP Publishing Ltd.
Type
journal article