Electronic Structure of GaN Nanowire Studied by X-ray-absorption Spectroscopy and Scanning Photoelectron Microscopy
Journal
Applied Physics Letters
Journal Volume
82
Journal Issue
22
Pages
3949-3451
Date Issued
2003
Author(s)
J. W. Chiou
Abstract
Information on the electronic structures of the gallium nitride (GaN) nanowires and thin films was obtained by employing x-ray absorption near edge structure (XANES) and scanning photoelectron microscopy (SPEM). The apparent depression of the SPEM intensity for the nanowires was not interpreted as a decrease of the density of valence-band states. The transition probabilities were enhanced in the nanowires.
Publisher
American Institute of Physics
Type
journal article