From localization to Landau quantization in a two-dimensional GaAs electron system containing self-assembled InAs quantum dots
Journal
Physical Review B - Condensed Matter and Materials Physics
Journal Volume
69
Journal Issue
7
Pages
733111-733114
Date Issued
2004
Author(s)
Abstract
We have studied insulator-quantum Hall-insulator (I-QH-I) transitions in a gated two-dimensional GaAs electron gas containing InAs quantum dots. In this system Shubnikov-de Haas oscillations are observed in both the low-field and high-field insulating regimes, showing that Landau quantization and localization can coexist. A phase diagram is constructed based on our experimental results, and we see that the critical points of the I-QH-I transitions do not correspond to crossover from localization to Landau quantization. Moreover, good scaling behavior is observed on both sides of low- and high-field I-QH transitions. © 2004 The American Physical Society.
Type
journal article