GaN-Based Stress-Induced Bandgap Widening with Various Arrangements of Patterned Sapphire Substrates
Journal
Optics InfoBase Conference Papers
ISBN
9781557528209
Date Issued
2016-01-01
Author(s)
Su, Vin Cent
Chen, Po Hsun
Chen, Yen Pu
Lee, Ming Lun
You, Yao Hong
Hung, Zheng Hung
Hsu, Ta Cheng
Lin, Yu Yao
Lin, Ray Ming
CHIEH-HSIUNG KUAN
Abstract
By varying the arrangements of patterned sapphire substrates, the stress-induced bandgap widening of GaN-based epitaxial layers can be acquired. Photoluminescence and Raman results demonstrate a linear relationship of blue-shift with the increase of residual stress.
Type
conference paper