Nondestructive RBSOA characterization of IGBTs and MCTs
Journal
IEEE Transactions on Power Electronics
Journal Volume
10
Journal Issue
3
Pages
368-372
Date Issued
1995-05
Author(s)
Abstract
Nondestructive evaluation of IGBTs and MCTs are reported and their corresponding RBSOAs established. It was observed that compared to BJTs, IGBTs, and MCTs exhibit very different turn-off breakdown characteristics. Avalanche breakdown of the parasitic transistor accounts for the loss of dynamic voltage blocking capability of both IGBTs and MCTs. © 1995 IEEE
Type
journal article