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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Design of boost power factor corrector with GaN HEMT devices
Details
Design of boost power factor corrector with GaN HEMT devices
Journal
2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017
Pages
1270-1274
Date Issued
2017
Author(s)
Niu, Y.-C.
Yang, C.-J.
Chen, Y.-M.
Chang, Y.-R.
YAOW-MING CHEN
DOI
10.1109/IFEEC.2017.7992226
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/501253
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85034083257&doi=10.1109%2fIFEEC.2017.7992226&partnerID=40&md5=aa64d33092a1209b359ff54b4540b70a
SDGs
[SDGs]SDG7
Type
conference paper
