Isolation and Strain Techniques for SiGe Power Amplifiers
Date Issued
2007
Date
2007
Author(s)
Lin, Chun-Ping
DOI
en-US
Abstract
In this thesis, we will introduce several isolation technologies for dual power amplifiers, then we will introduce the mobility increase effect by applying external biaxial mechanical strained HBT power amplifier circuit and the strain mechanism and setup. Finally we use the tunable matching network to solve the impedance shift effect due to the increase dc current. For the isolation of dual power amplifiers, the amount of equivalent coupling effect at 2.45GHz before laser cut is -24.7dB, first laser cut is -27.2dB and second laser cut is -29.25dB. The EVM at 3% criterion after first laser cut of standalone condition is 11.4 dBm, equal power is 8.9 dBm and 10dB interference from down-PA is 7.8 dBm. After second laser cut of standalone is 15 dBm, equal power is 13.9 dBm and 10dB interference from down-PA is 9.8 dBm. The small signal gain, P1dB, and PAE at P1dB are 18.6dB, 25.3dBm and 16.7%, respectively.
Subjects
機械應力
功率放大器
矽鍺
mechaincal strain
power amplifier
SiGe
Type
thesis
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