Optical properties of a-plane GaN strained by photo-chemically grown gallium hydroxide
Journal
Physica Status Solidi (C) Current Topics in Solid State Physics
Pages
1780-1782
Date Issued
2008-01
Author(s)
Abstract
We report the observation of green emission centered at 500nm, accompanied with luminescence enhancement and spectral blue shift (∼31meV) in the bandedge emission from a-plane grown gallium nitride (GaN) passivated with gallium hydroxide (GaOOH). From study of the photo-current response and polarization-resolved low-temperature microphotoluminescence (μ-PL) we resolved an evolution of gain competition process between the green and the UV emission bands. By dissolving the oxide we recover the emission characteristics of the as-grown a-GaN. These observations can be ascribed to a formation of compressively-strained a-GaN due to a coherently grown GaOOH atop layer. The latter is responsible for the spectral blue shift and the generation of acceptor like deep-levels causing the green-band transition in the emission and photo-current response. Enhancement of bandedge emission from the oxide covered a-GaN is due to the GaOOH surface passivation effect which was prepared by the photo-enhance wet oxidation method. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.
Event(s)
7th International Conference of Nitride Semiconductors, ICNS-7
Other Subjects
A-plane; A-plane GaN; As-grown; Band transitions; Band-edge emissions; Blue shift; Current response; Deep-levels; Emission characteristics; Gain competition; Green emissions; Low temperatures; Luminescence enhancements; Microphotoluminescence; Surface passivation; UV emissions; Wet oxidation; Dissolution; Gallium alloys; Optical properties; Passivation; Gallium nitride
Type
conference paper