Reducing the critical switching current in the free layer of magnetic random access memory
Journal
Journal of Magnetism and Magnetic Materials
Journal Volume
304
Journal Issue
1
Pages
E288-E290
Date Issued
2006
Author(s)
Yang, Jyh-Shinn
Abstract
The switching behavior of synthetic antiferromagnetic (SyAF) bilayers in a toggle magnetic random access memory is investigated by micromagnetism. The strength of exchange coupling between the two sublayers significantly modifies the switching behavior of SyAF bilayers. The critical switching current decreases with decreasing the exchange coupling, and the low critical switching current can be achieved for SyAF bilayers solely based on the magnetostatic coupling. In addition, the optimization of the end shape in free layers and the ratio of width to height of conducting lines can further reduce the critical switching current. © 2006 Elsevier B.V. All rights reserved.
SDGs
Type
journal article