Bi-directional Diode
Date Issued
2009
Date
2009
Author(s)
Chien, Yi-Hang
Abstract
Until today, gate length of MOSFET have scaled down to nano-scale. As semiconductor process keep regenerating, ITRS predict that the channel length will smaller than sixteen nano. Process technologic followed technic of nowadays will not keep scaling down. In order to follow Moor’s law, nano carbon tube, resonant tunneling device, spin FET, atomic or spin electronic device will be a solution to this problem. This paper propose a novel structure becoming electronic device to solve this problem. Semiconductor diode is made of P-N junction and its electrical properties are characterized by its energy barrier at the junction. Here, we report a new type of diode structure based on wrinkled nanostructure fabricated by standard processing. Wrinkling SiGe thin film is a novel structure. So we don’t have too much about this structure. But we anticipate that this structure will be applied to semiconductor device. The structure is built upon Si1-xGex/Si1-yGey hetero-structure with only boron-doping. The current-voltage exhibits the characteristic of diode behavior with both positive and negative bias. The present investigation provides an alternative approach for the electrical diode which is widely employed in the circuitry.
Subjects
SiGe
Bi-layer
wrinkle
electrical properties
Type
thesis
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ntu-98-J96921006-1.pdf
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