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DC, and RF scattering parameters, noise and power characteristics of enhancement-mode In<inf>0.51</inf>Ga<inf>0.49</inf>P/In<inf>0.15</inf>Ga<inf>0.85</inf>/As/GaAs power pHEMTs
Journal
IEEE International Symposium on Compound Semiconductors, Proceedings
Journal Volume
2003-January
Pages
223-224
Date Issued
2003
Author(s)
Type
conference paper