Fabrication and transport properties of clean long one-dimensional quantum wires formed in modulation-doped GaAs/AIGaAs heterostructures
Journal
Applied Physics Letters
Journal Volume
75
Journal Issue
19
Pages
2975-2977
Date Issued
1999
Author(s)
Abstract
We describe the fabrication and transport properties of clean long one-dimensional quantum wires formed in high-quality modulation-doped GaAs/AIGaAs heterostructures. In a 3 μm wire, we observe 25 conductance steps with no superimposed resonant features. With increasing split-gate length, we observe a crossover from ballistic towards diffusive transport, and in 5 and 6 μm wires, a reduction of conductance plateau values as large as 8% and 25% is observed, respectively. © 1999 American Institute of Physics.
SDGs
Type
journal article