Publication: Environment-insensitive and gate-controllable photocurrent enabled by bandgap engineering of MoS 2 junctions
cris.lastimport.scopus | 2025-05-14T22:20:14Z | |
cris.virtual.department | Materials Science and Engineering | en_US |
cris.virtual.department | Physics | en_US |
cris.virtual.department | Center for Condensed Matter Sciences | en_US |
cris.virtual.department | Applied Physics | en_US |
cris.virtual.department | Program in Nanoengineering and Nanoscience | en_US |
cris.virtual.orcid | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
cris.virtual.orcid | 0000-0003-1203-5115 | en_US |
cris.virtual.orcid | 0000-0001-7065-4411 | en_US |
cris.virtualsource.department | da53c5f9-d388-49ac-b93b-7a6811c6ef80 | |
cris.virtualsource.department | 1d3b630e-5975-4135-aa19-29724539c8c7 | |
cris.virtualsource.department | 1d3b630e-5975-4135-aa19-29724539c8c7 | |
cris.virtualsource.department | f0181849-2fa9-417b-a4ee-5e8b38ea2eac | |
cris.virtualsource.department | f0181849-2fa9-417b-a4ee-5e8b38ea2eac | |
cris.virtualsource.orcid | da53c5f9-d388-49ac-b93b-7a6811c6ef80 | |
cris.virtualsource.orcid | 1d3b630e-5975-4135-aa19-29724539c8c7 | |
cris.virtualsource.orcid | f0181849-2fa9-417b-a4ee-5e8b38ea2eac | |
dc.contributor.author | Shih F.-Y. | en_US |
dc.contributor.author | Wu Y.-C. | en_US |
dc.contributor.author | Shih Y.-S. | en_US |
dc.contributor.author | Shih M.-C. | en_US |
dc.contributor.author | Wu T.-S. | en_US |
dc.contributor.author | Ho P.-H. | en_US |
dc.contributor.author | Chen C.-W. | en_US |
dc.contributor.author | Chen Y.-F. | en_US |
dc.contributor.author | Chiu Y.-P. | en_US |
dc.contributor.author | CHUN-WEI CHEN | en_US |
dc.contributor.author | YANG-FANG CHEN | en_US |
dc.contributor.author | YA-PING CHIU | en_US |
dc.creator | CHUN-WEI CHEN;Wang W.-H.;Chiu Y.-P.;Chen Y.-F.;Chen C.-W.;Ho P.-H.;Wu T.-S.;Shih M.-C.;Shih Y.-S.;Wu Y.-C.;Shih F.-Y. | |
dc.date.accessioned | 2019-11-27T02:28:10Z | |
dc.date.available | 2019-11-27T02:28:10Z | |
dc.date.issued | 2017 | |
dc.identifier.doi | 10.1038/srep44768 | |
dc.identifier.issn | 20452322 | |
dc.identifier.scopus | 2-s2.0-85015896796 | |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85015896796&doi=10.1038%2fsrep44768&partnerID=40&md5=e2187f7fa65de210551bf8d2c62a30a3 | |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/432786 | |
dc.publisher | Nature Publishing Group | |
dc.relation.ispartof | Scientific Reports | |
dc.relation.journalvolume | 7 | |
dc.title | Environment-insensitive and gate-controllable photocurrent enabled by bandgap engineering of MoS 2 junctions | en_US |
dc.type | journal article | en |
dspace.entity.type | Publication |