Accumulation-type vs. inversion-type of an ultra-thin SIO PMOS device operating at 300 K and 77 K: subthreshold behavior and pull-up switching performance of a CMOS inverter
Resource
VLSI Technology, Systems, and Applications, 1993. Proceedings of Technical Papers. 1993 International Symposium on
Journal
1993 International Symposium on VLSI Technology, Systems, and Applications, 1993
Pages
-
Date Issued
1993-05
Date
1993-05
Author(s)
Kuo, J.B.
Sim, J.H.
DOI
N/A
Abstract
This paper presents two-dimensional simulation study on the accumulation-type vs. the inversion-type of an ultra-thin SOf PMOS device operating at 300A' and 77K in terms of its subthreshold behavior and pull-up switching performance of a CMOS inverter, using low-temperature PISCES [1].
Type
journal article
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