Photoluminescence characterization of midinfrared InNxAs1–x/In0.53Ga0.47As/InP multiquantum wells with various N contents
Journal
Applied Physics Letters
Journal Volume
87
Journal Issue
8
Pages
81908
Date Issued
2005-08
Author(s)
Abstract
We report the temperature-dependent photoluminescence characterization of In Nx As1-x In0.53 Ga0.47 AsInP multiple quantum wells with various N contents emitting in the midinfrared wavelength range. The emission wavelength in this material system can be tuned by the N content, but the bowing effect is much weaker than in GaNAs. The correlation between the optical properties and the interface quality is demonstrated by examining the barrier-related emission. The role played by N is elucidated by comparing quantum well samples having either zero, low (0.25%) or high (5%) N content. © 2005 American Institute of Physics.
Type
journal article