A derivative of oxadiazole used as the host of the metal doped electron transport layer material
Resource
Proceedings of the International Display Manufacturing Conference and Exhibition (IDMC'05), 773
Journal
International Display Manufacturing Conference and Exhibition, IDMC'05
Pages
773 - 774
Date Issued
2005
Date
2005
Author(s)
Abstract
In this paper, we report a new host material used as the host of electron transport layer (ETL) for metal dopant (MD) technique. This host material exhibits high Tg and good thermal stability. The average roughness of the thin film is quite small as compared with other derivatives it helps to reduce the leakage current.
Event(s)
International Display Manufacturing Conference and Exhibition, IDM
Other Subjects
Doping (additives); Electron transitions; Leakage currents; Surface roughness; Thermodynamic stability; Thin films; Electron transport layer (ETL); Metal dopant (MD); Oxadiazole; Sulfur compounds
Type
conference paper