Three-dimensional simulation of heat flow, segregation,and zone shape in floating-zone silicon growth under axial and transversal magnetic fields
Resource
Journal of Crystal Growth 262 (1-4): 59-71
Journal
Journal of Crystal Growth
Journal Issue
262
Pages
59-71
Date Issued
2004
Date
2004
Author(s)
Lan, C.W.
Yeh, B.C.
DOI
246246/2006111501233481
Abstract
Three-dimensional simulation is carried out to illustrate the effects of magnetic fields on the heat flow, dopant
segregation, and the zone shape in a small-scale floating-zone silicon growth. With an axial magnetic field, a steady
growth can be found. However, with the increasing magnetic field strength, there is a steady solution with a four-fold
symmetry before reaching an axisymmetric state. With a transversal field, although the molten zone is asymmetric, the
minimum field strength required for a steady growth is found much lower than the axial one. The calculated results
show a simple two-fold symmetry with respect to the magnetic direction. Although the convection on the plane parallel
to the transversal field can be significantly suppressed, the flow on the perpendicular plane is not weakened at all due to
the buildup of electric potential. This leads to a non-uniformzone and an elliptic crystal shape. Besides, due to the
significant dopant mixing on the perpendicular plane, for the same field strength, the radial segregation in the
transversal field is found smaller than that in the axial field.
Subjects
A1. Convection
A1. Lorentz force
A1. Magnetic field
A1. Segregation
B2. Floating zone technique
Publisher
Taipei:National Taiwan University Dept Chem Engn
Type
journal article
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