Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides
Journal
Applied Physics Express
Journal Volume
8
Journal Issue
8
Date Issued
2015
Author(s)
Yeh, P.-C.
Lin, Y.-W.
Huang, Y.-L.
Hung, J.-H.
Lin, B.-R.
Yang, L.
Wu, C.-H.
Wu, T.-K.
Wu, C.-H.
Abstract
An enhancement-mode AlGaN/GaN inverted-trapezoid trigate MOS high-electron-mobility transistor (HEMT), featuring double-layer oxides formed by photoenhanced chemical oxidation and plasma-enhanced atomic layer deposition (PEALD) oxide deposition, was shown to support the threshold voltage (Vth) with linear slopes of 0.36 V/nm and -0.32 V/μm2 scaled with recess depth and device area, respectively. The proposed device exhibited Vth of 1.2 V, current on/off ratio of 108, and fT/fmax of 9/36 GHz at a gate length/width of 250/360 nm. These observations can be ascribed to the combined effects of (a) an interfacial negative space charge of 3.2 μC/cm2 in the gate-recessed device that partially compensates for the spontaneous charge and (b) side-wall passivation that preserves the high-mobility channel.
SDGs
Type
journal article