Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides
Journal
Applied Physics Express
Journal Volume
8
Journal Issue
8
Date Issued
2015
Author(s)
Yeh, P.-C.
Lin, Y.-W.
Huang, Y.-L.
Hung, J.-H.
Lin, B.-R.
Yang, L.
Wu, C.-H.
Wu, T.-K.
Wu, C.-H.
Type
journal article