A W-Band Medium Power Amplifier in 90 nm CMOS

A W-band CMOS medium power amplifier (PA) is presented in this letter. The circuit is implemented in 90 nm mixed signal/radio frequency CMOS process. By utilizing balanced architecture, the PA demonstrated a measured maximum small signal gain of 17 dB with 3 dB bandwidth from 91 to 108 GHz. The saturation output power (Psat) is 12 dBm between 90 and 100 GHz for V ds of each transistor at 1.5 V. To our knowledge, this is the highest frequency CMOS PA to date. © 2008 IEEE.