Contributions of Sidewall Illumination and Current Spreading to the Light Emission of InGaN/GaN Light Emitting Diode Arrays
Date Issued
2006
Date
2006
Author(s)
Yu, Yi-Cheng
DOI
zh-TW
Abstract
In recent years, the request of high power LED is increased. The research of special geometry of high power LED structure have great progress in recent years. Many groups use microdisk and microring structure to make a lot of high power LED. So we hope to get more information of the microdisk and microring LED. Because it is easy to find that, the luminescence gain of this kind of structure is come from the sidewall illumination, so the purpose of this research is to look for a proper method, to stop the sidewall illumination of microdisk and microring LED, make use of this to compare to the microdisk and microring LED with sidewall illumination. In addition, innovatively adding the discussion of current spreading effect, make the range contained in this research more extensive.
The process of LED in this experiment use six mask, including photolithography, etching, thinfilm, annealing, and so forth, and use HP4155, SEM instrument to measure and observe the luminous intensity, surface structure characteristic of the chip .
The important achievements got are as follows:
1.In the microdisk LED, increase with size of component, the contribution of luminous intensity gain by current spreading can be heavier and heavier; but the sidewall illumination will be smaller and smaller.
2. In the microring LED, with both sides sidewall illumination compare with only one sidewall illumination structure, the power density will have about 5 more above, it can be known that the contribution of sidewall illumination is very powerful in LED .
3.As the increasing of array number of microdisk and microring LED, effect of series resistance will more obvious influence the luminous intensity, so proper metal electrode or circuit must be considered.
In the future, I hope to use the concept to research the structure which can improve the quantum efficiency of LED, make the dream of high power blue light LED to realize as soon as possible.
The process of LED in this experiment use six mask, including photolithography, etching, thinfilm, annealing, and so forth, and use HP4155, SEM instrument to measure and observe the luminous intensity, surface structure characteristic of the chip .
The important achievements got are as follows:
1.In the microdisk LED, increase with size of component, the contribution of luminous intensity gain by current spreading can be heavier and heavier; but the sidewall illumination will be smaller and smaller.
2. In the microring LED, with both sides sidewall illumination compare with only one sidewall illumination structure, the power density will have about 5 more above, it can be known that the contribution of sidewall illumination is very powerful in LED .
3.As the increasing of array number of microdisk and microring LED, effect of series resistance will more obvious influence the luminous intensity, so proper metal electrode or circuit must be considered.
In the future, I hope to use the concept to research the structure which can improve the quantum efficiency of LED, make the dream of high power blue light LED to realize as soon as possible.
Subjects
電流分佈
側壁放光
current spreading
Sidewall illumination
Type
thesis
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